BC857XMB_15 Datasheet, PDF (6/14 Pages) NXP Semiconductors – 45 V, 100 mA PNP general-purpose transistors

NXP Semiconductors
BC857xMB series
45 V, 100 mA PNP general-purpose transistors
500
h_FE
400
(1)
300
200
(2)
(3)
100
mle188
−1200
V_BE
(mV)
−1000
−800
−600
−400
mle189
(1)
(2)
(3)
−^010−2
−10^−1
−1
−10
−10²
−10³
I_C (mA)
V_CE = 5 V
(1) T_amb = 150 C
(2) T_amb = 25 C
(3) T_amb = 55 C
Fig 3. BC857AMB: DC current gain as a function of
collector current; typical values
−20_−010_{−2 −10−1}
−1
−10
−10²
−10³
I_C (mA)
V_CE = 5 V
(1) T_amb = 55 C
(2) T_amb = 25 C
(3) T_amb = 150 C
Fig 4. BC857AMB: Base-emitter voltage as a function
of collector current; typical values
−10⁴
V_CEsat
(mV)
−10³
mle190
−1200
V_BEsat
(mV)
−1000
−800
mle191
(1)
(2)
−10²
(1)
(2)
(3)
(3)
−600
−400
−1_−010_−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 150 C
(2) T_amb = 25 C
(3) T_amb = 55 C
Fig 5.
BC857AMB: Collector-emitter saturation
voltage as a function of collector current;
typical values
−20_−010_−1
−1
−10
−10²
−10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 55 C
(2) T_amb = 25 C
(3) T_amb = 150 C
Fig 6.
BC857AMB: Base-emitter saturation voltage
as a function of collector current; typical
values
BC857XMB_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 February 2012
© NXP B.V. 2012. All rights reserved.
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