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| BC857XMB_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – 45 V, 100 mA PNP general-purpose transistors | |||
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NXP Semiconductors
BC857xMB series
45 V, 100 mA PNP general-purpose transistors
7. Characteristics
Table 8. Characteristics
Tamb = 25 ï°C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base
cut-off current
IEBO
emitter-base
cut-off current
VCB = ï30 V; IE = 0 A
VCB = ï30 V; IE = 0 A;
Tj = 150 ï°C
VEB = ï5 V; IC = 0 A
-
-
ï15 nA
-
-
ï5
ïA
-
-
ï100 nA
hFE
DC current gain
BC857AMB
VCE = ï5 V; IC = ï2 mA
125 -
250
BC857BMB
220 -
475
BC857CMB
420 -
800
VCEsat collector-emitter
IC = ï10 mA; IB = ï0.5 mA
-
-
saturation voltage
IC = ï100 mA; IB = ï5 mA [1] -
-
VBE
base-emitter voltage IC = ï2 mA; VCE = ï5 V
ï600 -
IC = ï10 mA; VCE = ï5 V
-
-
fT
transition frequency VCE = ï5 V; IC = ï10 mA;
100 -
f = 100 MHz
ï200
ï400
ï750
ï820
-
mV
mV
mV
mV
MHz
Cc
collector capacitance VCB = ï10 V; IE = ie = 0 A;
-
-
2.5 pF
f = 1 MHz
NF
noise figure
IC = ï200 ïA; VCE = ï5 V;
-
RS = 2 kï; f = 1 kHz;
B = 200 Hz
-
10
dB
[1] Pulse test: tp ï£ 300 ïs; ï¤ ï£ 0.02.
BC857XMB_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 21 February 2012
© NXP B.V. 2012. All rights reserved.
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