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BAS516 Datasheet, PDF (6/12 Pages) NXP Semiconductors – High-speed diode
Philips Semiconductors
High-speed diode
Product specification
BAS516
handbook, full pagewidth
RS = 50 Ω
V = VR IF x R S
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
R i = 50 Ω
VR
MGA881
tr
tp
10%
90%
input signal
t
IF
t rr
t
(1)
output signal
(1) IR = 1 mA.
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ = 0.05;
Oscilloscope: rise time tr = 0.35 ns.
Fig.7 Reverse recovery voltage test circuit and waveforms.
I
1 kΩ
450 Ω
RS = 50 Ω
D.U.T.
OSCILLOSCOPE
R i = 50 Ω
MGA882
I
90%
10%
tr
tp
input
signal
V
V fr
t
t
output
signal
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005.
Fig.8 Forward recovery voltage test circuit and waveforms.
1998 Aug 31
6