BAS516 Datasheet, PDF (2/12 Pages) NXP Semiconductors – High-speed diode

Philips Semiconductors
High-speed diode
Product specification
BAS516
FEATURES
• Ultra small plastic SMD package
• High switching speed: max. 4 ns
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA.
APPLICATIONS
• High-speed switching in e.g. surface mounted circuits.
DESCRIPTION
The BAS516 is a high-speed switching diode fabricated in
planar technology, and encapsulated in the SOD523
(SC79) SMD plastic package.
PINNING
PIN
DESCRIPTION
1
cathode

²
anode
handbook, halfpage₁
2
Top view
MAM408
Marking code: 6.
Fig.1 Simplified outline (SOD523) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_RRM
V_R
I_F
I_FRM
I_FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
CONDITIONS
T_s = 90 °C; note 1; see Fig.2
square wave; T_j = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 1 ms
t=1s
T_s = 90 °C; note 1
Note
1. T_s is the temperature at the soldering point of the cathode tab.
MIN.
−
−
−
−
MAX.
85
75
250
500
UNIT
V
V
mA
mA
−
4
A
−
1
A
−
0.5
A
−
500
mW
−65
+150 °C
−
150
°C
1998 Aug 31
2