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| BAS516 Datasheet, PDF (3/12 Pages) NXP Semiconductors – High-speed diode | |||
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Philips Semiconductors
High-speed diode
Product speciï¬cation
BAS516
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
trr
reverse recovery time
Vfr
forward recovery voltage
CONDITIONS
see Fig.3
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
see Fig.5
VR = 25 V
VR = 75 V
VR = 25 V; Tj = 150 °C
VR = 75 V; Tj = 150 °C;
f = 1 MHz; VR = 0; see Fig.6
when switched from IF = 10 mA to IR = 10 mA;
RL = 100 â¦; measured at IR = 1 mA; see Fig.7
when switched from IF = 10 mA; tr = 20 ns; see Fig.8
MAX.
715
855
1
1.25
30
1
30
50
1
4
1.75
UNIT
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-s
thermal resistance from junction to soldering point note 1
Note
1. Soldering point of the cathode tab.
VALUE
120
UNIT
K/W
1998 Aug 31
3
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