74HC03 Datasheet, PDF (6/8 Pages) NXP Semiconductors – Quad 2-input NAND gate

Philips Semiconductors
Quad 2-input NAND gate
Product specification
74HC/HCT03
DC CHARACTERISTICS FOR 74HCT
For the DC characteristics see “74HC/HCT/HCU/HCMOS Logic Family Specifications”, except that the V_OH values are
not valid for open drain. They are replaced by I_OZ as given below.
Output capability: standard (open drain), excepting V_OH
I_CC category: SSI
Voltages are referenced to GND (ground = 0 V)
SYMBOL PARAMETER
T_amb (°C)
74HCT
+25
−40 to +85
min. typ. max. min. max.
I_OZ
HIGH level output
leakage current
0.5
5.0
TEST CONDITIONS
−40 to +125
UNIT
V_CC
(V)
V_I
min. max.
OTHER
10.0 µA
4.5
to
5.5
V_IL
V_O = V_O(max)(1)
or GND
Note
1. The maximum operating output voltage (V_O(max)) is 6.0 V.
Note to HCT types
The value of additional quiescent supply current (∆I_CC) for a unit load of 1 is given in the family specifications.
To determine ∆I_CC per input, multiply this value by the unit load coefficient shown in the table below.
INPUT
nA, nB
UNIT LOAD COEFFICIENT
1.0
AC CHARACTERISTICS FOR 74HCT
GND = 0 V; t_r = t_f = 6 ns; C_L = 50 pF
T_amb (°C)
SYMBOL PARAMETER
74HCT
+25
−40 to +85 −40 to +125
min. typ. max. min. max. min. max.
t_PZL/ t_PLZ propagation delay
nA, nB, to nY
12 24
30
36
t_THL
output transition time
7 15
19
22
UNIT
ns
ns
TEST CONDITIONS
V_CC ^WAVEFORMS
(V)
4.5 Fig.6
4.5 Fig.6
December 1990
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