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SI9956DY Datasheet, PDF (5/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor
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Philips Semiconductors
Si9956DY
N-channel enhancement mode field-effect transistor
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Static characteristics
VGS(th) gate-source threshold voltage
ID = 250 µA; VDS = VGS
IDSS
drain-source leakage current
IGSS
gate-source leakage current
VDS = 16 V; VGS = 0 V
Tj = 25 °C
Tj = 55 °C
VGS = ±20 V; VDS = 0 V
RDSon drain-source on-state resistance VGS = 10 V; ID = 2.2 A; Figure 7 and 8
VGS = 4.5 V; ID = 1 A; Figure 7 and 8
Dynamic characteristics
gfs
forward transconductance
VDS = 15 V; ID = 3.5 A
Qg(tot) total gate charge
ID = 1.8 A; VDS = 10 V; VGS = 10 V; Figure 13
Qgs
Qgd
td(on)
gate-source charge
gate-drain (Miller) charge
turn-on delay time
VDD = 10 V; RD = 10 Ω; VGS = 10 V; RG = 6 Ω
tr
turn-on rise time
td(off)
turn-off delay time
tf
turn-off fall time
Source-drain (reverse) diode
VSD
source-drain (diode forward) voltage IS = 2.3A; VGS = 0 V; Figure 12
trr
reverse recovery time
IS = 1.7 A; dIS/dt = −100 A/µs; VGS = 0 V
Min Typ Max Unit
1−−V
− − 2 µA
− − 25 µA
− − 100 nA
− 55 100 mΩ
− 70 200 mΩ
− 5.7 − S
− 8 30 nC
− 0.8 − nC
− 1.7 − nC
− 6 20 ns
− 8 20 ns
− 14 90 ns
− 8 50 ns
− 0.75 1.2 V
− 50 100 ns
9397 750 08414
Product data
Rev. 01 — 16 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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