 English |
|
|
|
|
|
|
|
| SI9956DY Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor | |||
| |||
|
Si9956DY
N-channel enhancement mode ï¬eld-effect transistor
M3D315
Rev. 01 â 16 July 2001
Product data
1. Description
Dual N-channel enhancement mode ï¬eld-effect transistor in a plastic package using
TrenchMOSâ¢1 technology.
Product availability:
Si9956DY in SOT96-1 (SO8).
2. Features
s Low on-state resistance
s Fast switching
s TrenchMOS⢠technology.
3. Applications
s DC to DC convertors
s DC motor control
s Lithium-ion battery applications
c
c
s Notebook PC
s Portable equipment applications.
4. Pinning information
Table 1: Pinning - SOT96-1, simpliï¬ed outline and symbol
Pin
Description
Simpliï¬ed outline
1
source 1 (s1)
2
gate 1 (g1)
3
source 2 (s2)
4
gate 2 (g2)
5,6
drain 2 (d2)
7,8
drain 1 (d1)
8 76 5
pin 1 index
03ab52
12
34
SOT96-1 (SO8)
Symbol
g1
d1
s1
g2
d2
03ab58
s2
1. TrenchMOS is a trademark of Royal Philips Electronics.
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese