SI9956DY Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel enhancement mode field-effect transistor

Philips Semiconductors
Si9956DY
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
V_DS
drain-source voltage (DC)
T_j = 25 to 150 °C
−
I_D
drain current (DC)
T_amb = 25 °C; pulsed; t_p ≤ 10 s
−
P_tot
total power dissipation
T_amb = 25 °C; pulsed; t_p ≤ 10 s
−
T_j
junction temperature
−
R_DSon drain-source on-state resistance V_GS = 10 V; I_D = 2.2 A
55
V_GS = 4.5 V; I_D = 1 A
70
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_DS
drain-source voltage (DC)
V_GS
gate-source voltage (DC)
I_D
drain current (DC)
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
operating junction temperature
Source-drain diode
T_j = 25 to 150 °C
−
−
T_amb = 25 °C; pulsed; t_p ≤ 10 s; Figure 2 and 3 −
T_amb = 70 °C; pulsed; t_p ≤ 10 s; Figure 2
−
T_amb = 25 °C; pulsed; t_p ≤ 10 µs; Figure 3
−
T_amb = 25 °C; pulsed; t_p ≤ 10 s; Figure 1
−
T_amb = 70 °C; pulsed; t_p ≤ 10 s; Figure 1
−
−55
−55
I_S
source (diode forward) current (DC) T_amb = 25 °C
−
Max Unit
20
V
3.5
A
2
W
150
°C
100
mΩ
200
mΩ
Max Unit
20
V
±20
V
3.5
A
2.8
A
14
A
2
W
1.3
W
+150 °C
+150 °C
1.3
A
9397 750 08414
Product data
Rev. 01 — 16 July 2001
© Philips Electronics N.V. 2001. All rights reserved.
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