RZ1214B65Y Datasheet, PDF (5/8 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
RZ1214B65Y
handbook, full pagewidth
6.5
,,,,,, 3
0.65
2.3
,_,,_,,_,,_,,_,,_,,_,,,_,,,_,,,_,,,_,,,_,,,_,, input
5.3
15
5.7
0.65
output
3 3.5 5 3 5
8.5
4.8 4
MGK060
Dimensions in mm.
Substrate: Epsilam.
Thickness: 0.635 mm.
Permittivity: ε_r = 10.
Fig.3 Wideband test circuit for class-C operation at 1.2 to 1.4 GHz.
handbook, full pagewidth
1
0.5
2
0.2
+j
0
–j
0.2
5
10
0.2
0.5
1
1.4
zi
2
5 10
1.2 GHz
∞
1.3 1.3
10
1.4 _{Z L} ^{1.2 GHz}
5
0.5
2
1
Class-C operation; V_CE = 50 V; P_L = 65 W; Z_o = 5 Ω; t_p = 150 µs; δ = 5%.
MBC985
Fig.4 Input and optimum load impedances as functions of frequency; typical values.
1999 Dec 24
5