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RZ1214B65Y Datasheet, PDF (3/8 Pages) NXP Semiconductors – NPN microwave power transistor | |||
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Philips Semiconductors
NPN microwave power transistor
Product speciï¬cation
RZ1214B65Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VCES
VEBO
IC
Ptot
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Tsld
soldering temperature
CONDITIONS
open emitter
open base
RBE = 0 â¦
open collector
tp ⤠150 µs; δ ⤠5%
Tmb ⤠75 °C;
tp ⤠150 µs; δ ⤠5%
at 0.2 mm from the case;
t ⤠10 s
MIN.
â
â
â
â
â
â
MAX.
65
15
60
3
6
225
UNIT
V
V
V
V
A
W
â65
+200
°C
â
200
°C
â
235
°C
handboo2k,50
Ptot
(W)
200
150
100
50
0
0
MGD977
50
100
150
200
Tmb (°C)
tp = 150 µs; δ = 5%.
Fig.2 Power derating curve.
1999 Dec 24
3
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