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RZ1214B65Y Datasheet, PDF (4/8 Pages) NXP Semiconductors – NPN microwave power transistor | |||
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Philips Semiconductors
NPN microwave power transistor
Product speciï¬cation
RZ1214B65Y
THERMAL CHARACTERISTICS
Tj = 75 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
Rth j-mb
Rth mb-h
Zth j-h
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
thermal resistance from junction to heatsink
CONDITIONS
note 1
tp = 100 µs; δ = 10 %;
notes 1 and 2
Notes
1. See âMounting recommendations in the General part of associated Handbookâ.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
MAX.
2.5
0.2
0.55
UNIT
K/W
K/W
K/W
CHARACTERISTICS
Tmb = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
V(BR)CBO
V(BR)CES
ICBO
IEBO
collector-base breakdown voltage
collector-emitter breakdown voltage
collector cut-off current
emitter cut-off current
CONDITIONS
IC = 40 mA; IE = 0
IC = 40 mA; RBE = 0
VCB = 50 V; IE = 0
VEB = 1.5 V; IC = 0
MIN.
65
60
â
â
MAX.
â
â
4
0.4
UNIT
V
V
mA
mA
APPLICATION INFORMATION
The transistors are 100% tested under the following conditions.
MODE OF
OPERATION
CONDITIONS
f
(GHz)
VCC
(V)
Class- C
tp = 150 µs; δ = 5% 1.2 to 1,4
50
tp = 300 µs; δ = 10% 1.2 to 1,4 50
PL
(W)
typ.80; >70
typ.80;
Gp
(dB)
typ.7.8; >7
typ.7
ηC
(%)
typ.40; >35
typ.30
Zi; ZL
(â¦)
see Fig 4
see Fig 4
1999 Dec 24
4
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