PTB32001X Datasheet, PDF (5/12 Pages) NXP Semiconductors – NPN microwave power transistors

Philips Semiconductors
NPN microwave power transistors
Product specification
PTB32001X; PTB32003X;
PTB32005X
CHARACTERISTICS
T_mb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_(BR)CBO
V_(BR)CES
I_CBO
I_EBO
C_cb
C_ce
collector-base breakdown voltage
PTB32001X
I_C = 1 mA; I_E = 0
PTB32003X
I_C = 2 mA; I_E = 0
PTB32005X
I_C = 3 mA; I_E = 0
collector-emitter breakdown voltage I_C = 10 mA; R_BE = 0 Ω
collector cut-off current
PTB32001X
PTB32003X
PTB32005X
emitter cut-off current
V_CE = 24 V; I_E = 0
V_CE = 24 V; I_E = 0
V_CE = 24 V; I_E = 0
PTB32001X
PTB32003X
PTB32005X
collector-base capacitance
V_EB = 1.5 V; I_C = 0
V_EB = 1.5 V; I_C = 0
V_EB = 1.5 V; I_C = 0
PTB32001X
PTB32003X
PTB32005X
collector-emitter capacitance
I_E = I_C = 0; V_CB = 24 V;
V_EB = 1.5 V; f = 1 MHz
I_E = I_C = 0; V_CB = 24 V;
V_EB = 1.5 V; f = 1 MHz
I_E = I_C = 0; V_CB = 24 V;
V_EB = 1.5 V; f = 1 MHz
PTB32001X
PTB32003X
PTB32005X
I_E = I_C = 0; V_CB = 24 V;
V_EB = 1.5 V; f = 1 MHz
I_E = I_C = 0; V_CB = 24 V;
V_EB = 1.5 V; f = 1 MHz
I_E = I_C = 0; V_CB = 24 V;
V_EB = 1.5 V; f = 1 MHz
MIN. TYP. MAX. UNIT
40
−
−
V
40
−
−
V
40
−
−
V
40
−
−
V
−
−
10
µA
−
−
20
µA
−
−
30
µA
−
−
0.2 µA
−
−
0.4 µA
−
−
0.6 µA
−
2.2 −
pF
−
3
−
pF
−
3.8 −
pF
−
0.3 −
pF
−
0.6 −
pF
−
0.9 −
pF
APPLICATION INFORMATION
Microwave performance in a common-base class B selective amplifier circuit; see note 1.
MODE OF
OPERATION
TYPE NUMBER
f
(GHz)
PTB32001X
3
Class B (CW) PTB32003X
3
PTB32005X
3
V_CC
(V)
24
24
24
P_L
(W)
>1.3; typ. 1.8
>2.5; typ. 3.0
>4.5; typ. 5.5
G_po
(dB)
>8; typ. 9.5
>8; typ. 9.5
>8; typ. 9.5
η_C
(%)
>35; typ. 45
>35; typ. 45
>35; typ. 45
Note
1. Circuit consists of prematching circuit board in combination with complementary input and output slug tuners.
1997 Feb 18
5