PTB32001X Datasheet, PDF (2/12 Pages) NXP Semiconductors – NPN microwave power transistors

Philips Semiconductors
NPN microwave power transistors
Product specification
PTB32001X; PTB32003X;
PTB32005X
FEATURES
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Localized thick oxide auto-alignment process and gold
sandwich metallization ensure an optimum temperature
profile and excellent performance and reliability.
PINNING - SOT440A
PIN
DESCRIPTION
1 collector
2 emitter
3 base connected to flange
APPLICATIONS
Common-base, class B power amplifiers up to 4.2 GHz. _olumns
1
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a metal ceramic SOT440A flange package with base
connected to the flange.
2
Top view
c
b
3
e
MAM131
MARKING
TYPE NUMBER
PTB32001X
PTB32003X
PTB32005X
MARKING CODE
3201X
3203X
3205X
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to T_mb = 25 °C in a common-base class B circuit.
TYPE NUMBER
MODE OF
OPERATION
f
(GHz)
V_CC
(V)
P_L
(W)
G_po
(dB)
PTB32001X
CW
PTB32003X
CW
PTB32005X
CW
3
24
≥1.3
≥8
3
24
≥2.5
≥8
3
24
≥4.5
≥8
η_C
(%)
≥35
≥35
≥35
Z_i
(Ω)
15 + j31
5.5 + j29
2.8 + j20
Z_L
(Ω)
5.5 + j10
5 − j2.2
4 − j7
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18
2