PTB32001X Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN microwave power transistors

Philips Semiconductors
NPN microwave power transistors
Product specification
PTB32001X; PTB32003X;
PTB32005X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
T_sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
PTB32001X
PTB32003X
PTB32005X
total power dissipation
PTB32001X
PTB32003X
PTB32005X
storage temperature range
operating junction temperature
soldering temperature
open emitter
open base
R_BE = 0 Ω
open collector
T_mb ≤ 75 °C; f > 1 MHz
t ≤ 10 s; note 1
Note
1. Up to 0.3 mm from ceramic.
MIN.
−
−
−
−
MAX.
40
15
40
3.0
UNIT
V
V
V
V
−
0.25 A
−
0.5
A
−
0.75 A
−
4.2
W
−
7.6
W
−
8.7
W
−65
+200 °C
−
200
°C
−
235
°C
6
handbook, halfpage
Ptot
(W)
4
2
MLC091
10
handbook, halfpage
Ptot
(W)
5
MLC092
0
−50
0
50
100
150
200
Tmb (^oC)
0
50
0
50
100
150
200
Tmb (^oC)
f > 1 MHz.
Fig.2 Power derating curve; PTB32001X.
1997 Feb 18
f > 1 MHz.
Fig.3 Power derating curve; PTB32003X.
3