PSMN4R3-80ES_15 Datasheet, PDF (5/15 Pages) NXP Semiconductors – N-channel 80 V, 4.3 m standard level MOSFET in I2PAK

NXP Semiconductors
PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
Vertical in free air
Min Typ Max Unit
-
0.22 0.49 K/W
-
60 -
K/W
1
Zth(j-mb)
(K/W)
δ = 0.5
10^-1
0.2
0.1
0.05
10^-2
0.02
003aaf629
P
δ = ^tp
T
single shot
t_p
t
T
10^-3
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN4R3-80ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 18 April 2011
© NXP B.V. 2011. All rights reserved.
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