PSMN4R3-80ES_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 80 V, 4.3 m standard level MOSFET in I2PAK

PSMN4R3-80ES
N-channel 80 V, 4.3 mΩ standard level MOSFET in I2PAK
Rev. 02 — 18 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High efficiency due to low switching
and conduction losses
„ Suitable for standard level gate drive
1.3 Applications
„ DC-to-DC converters
„ Load switch
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
P_tot
total power
dissipation
T_mb = 25 °C; see Figure 2
T_j
junction temperature
Static characteristics
R_DSon
drain-source
on-state resistance
Dynamic characteristics
V_GS = 10 V; I_D = 25 A;
T_j = 25 °C; see Figure 13
V_GS = 10 V; I_D = 25 A;
T_j = 100 °C; see Figure 12
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 10 V; I_D = 75 A;
V_DS = 40 V; see Figure 14;
see Figure 15
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
V_GS = 10 V; T_j(init) = 25 °C;
I_D = 120 A; V_sup ≤ 80 V;
R_GS = 50 Ω; unclamped
Min Typ Max Unit
-
-
80 V
[1] _-
-
120 A
-
-
306 W
-55 -
175 °C
[2] _-
[2] _-
3.7 4.3 mΩ
6.1 7.1 mΩ
-
28 -
nC
-
111 -
nC
-
-
676 mJ