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PSMN4R3-80ES_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel 80 V, 4.3 m standard level MOSFET in I2PAK | |||
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NXP Semiconductors
PSMN4R3-80ES
N-channel 80 V, 4.3 m⦠standard level MOSFET in I2PAK
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
junction temperature
Tsld(M)
peak soldering temperature
Source-drain diode
Tj ⥠25 °C; Tj ⤠175 °C
Tj ⥠25 °C; Tj ⤠175 °C; RGS = 20 kâ¦
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp ⤠10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp ⤠10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 120 A;
Vsup ⤠80 V; RGS = 50 â¦; unclamped
Min
-
-
-20
[1] -
[1] -
-
-
-55
-55
-
[1] -
-
-
[1] Continuous current is limited by package.
Max Unit
80 V
80 V
20 V
120 A
120 A
688 A
306 W
175 °C
175 °C
260 °C
120 A
688 A
676 mJ
200
ID
(A)
160
120
(1)
80
40
003aaf630
120
Pder
(%)
80
40
03aa16
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN4R3-80ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 18 April 2011
© NXP B.V. 2011. All rights reserved.
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