PSMN015-100B Datasheet, PDF (5/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
PSMN015-100B, PSMN015-100P
Drain current, ID (A)
80
VDS > ID X RDS(ON)
70
60
50
40
30
175 C
20
Tj = 25 C
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
I_D = f(V_GS); parameter T_j
Transconductance, gfs (S)
80
70
Tj = 25 C
60
50
VDS > ID X RDS(ON)
175 C
40
30
20
10
0
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
Drain current, ID (A)
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D)
Normalised On-state Resistance
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
Fig.9. Normalised drain-source on-state resistance.
R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j)
Threshold Voltage, VGS(TO) (V)
4.5
4
maximum
3.5
3
typical
2.5
2
minimum
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
1.0E-01 ^{Drain current, ID (A)}
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
I_D = f(V_GS); T_j = 25 ˚C
Capacitances, Ciss, Coss, Crss (pF)
10000
Ciss
1000
Coss
Crss
100
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Fig.12. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
August 1999
5
Rev 1.100