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PSMN015-100B Datasheet, PDF (1/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor | |||
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Philips Semiconductors
Product specification
N-channel TrenchMOS⢠transistor
PSMN015-100B, PSMN015-100P
FEATURES
⢠âTrenchâ technology
⢠Very low on-state resistance
⢠Fast switching
⢠Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 100 V
ID = 75 A
RDS(ON) ⤠15 mâ¦
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
⢠d.c. to d.c. converters
⢠switched mode power supplies
The PSMN015-100P is supplied in the SOT78 (TO220AB) conventional leaded package.
The PSMN015-100B is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404 (D2PAK)
PIN
DESCRIPTION
tab
tab
1 gate
2 drain1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ËC to 175ËC
Tj = 25 ËC to 175ËC; RGS = 20 kâ¦
Tmb = 25 ËC
Tmb = 100 ËC
Tmb = 25 ËC
Tmb = 25 ËC
MIN.
-
-
-
-
-
-
-
- 55
MAX.
100
100
± 20
752
53
240
230
175
UNIT
V
V
V
A
A
A
W
ËC
1 It is not possible to make connection to pin:2 of the SOT404 package
2 Maximum continuous current limited by package
August 1999
1
Rev 1.100
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