PSMN015-100B Datasheet, PDF (2/9 Pages) NXP Semiconductors – N-channel TrenchMOS transistor

Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
PSMN015-100B, PSMN015-100P
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
E_AS
Non-repetitive avalanche
Unclamped inductive load, I_AS = 74 A;
energy
t_p = 100 µs; T_j prior to avalanche = 25˚C;
V_DD ≤ 50 V; R_GS = 50 Ω; V_GS = 10 V; refer
to fig:15
I_AS
Non-repetitive avalanche
current
MIN.
-
MAX.
481
UNIT
mJ
-
75
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
SOT78 package, in free air
SOT404 package, pcb mounted, minimum
footprint
TYP.
-
60
50
MAX.
0.65
-
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS
V_GS(TO)
R_DS(ON)
I_GSS
I_DSS
Q_g(tot)
Q_gs
Q_gd
t_{d on}
t_r
t_{d off}
t_f
L_d
L_d
L_s
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V_GS = 0 V; I_D = 0.25 mA;
V_DS = V_GS; I_D = 1 mA
V_GS = 10 V; I_D = 25 A
V_GS = ±10 V; V_DS = 0 V
V_DS = 100 V; V_GS = 0 V;
T_j = -55˚C
T_j = 175˚C
T_j = -55˚C
T_j = 175˚C
T_j = 175˚C
I_D = 75 A; V_DD = 80 V; V_GS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V_DD = 50 V; R_D = 1.8 Ω;
V_GS = 10 V; R_G = 5.6 Ω
Resistive load
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured from tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
C_iss
Input capacitance
C_oss
Output capacitance
C_rss
Feedback capacitance
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
100 -
-
V
89 -
-
V
2.0 3.0 4.0 V
1.0 -
-
V
-
-
6
V
- 12 15 mΩ
-
- 41 mΩ
-
2 100 nA
- 0.05 10 µA
-
- 500 µA
- 109 - nC
- 20 - nC
- 50 - nC
- 30 - ns
- 80 - ns
- 150 - ns
- 95 - ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 4720 - pF
- 650 - pF
- 380 - pF
August 1999
2
Rev 1.100