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PMXB360ENEA_15 Datasheet, PDF (5/15 Pages) NXP Semiconductors – 80 V, N-channel Trench MOSFET
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NXP Semiconductors
PMXB360ENEA
80 V, N-channel Trench MOSFET
Symbol
Rth(j-sp)
Parameter
Conditions
thermal resistance
from junction to solder
point
Min Typ Max Unit
-
15
20
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2.
103
aaa-008918
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.5
0.33
0.25 0.2
0.1
0.05
0.02
10
0
0.01
1
10-3
10-2
10-1
1
FR4 PCB, standard footprint
10
102
103
tp (s)
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
aaa-008919
102
10
0.25
0.02
0.2
0.01
0.1
0
0.05
Fig. 6.
1
10-3
10-2
10-1
1
FR4 PCB, mounting pad for drain 6 cm2
10
102
103
tp (s)
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMXB360ENEA
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 September 2013
© NXP N.V. 2013. All rights reserved
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