PMXB360ENEA_15 Datasheet, PDF (1/15 Pages) NXP Semiconductors – 80 V, N-channel Trench MOSFET

PMXB360ENEA
80 V, N-channel Trench MOSFET
16 September 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
• Logic-level compatible
• Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
• Tin-plated 100 % solderable side pads for optical solder inspection
• ElectroStatic Discharge (ESD) protection > 2 kV HBM
• AEC-Q101 qualified
3. Applications
• Relay driver
• Power management in automotive and industrial applications
• LED driver
• DC-to-DC converter
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = 10 V; T_amb = 25 °C
V_GS = 10 V; I_D = 1.1 A; T_j = 25 °C
Min Typ Max Unit
-
-
80
V
-20 -
20
V
[1]
-
-
1.1 A
-
345 450 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
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