PIMD3 Datasheet, PDF (5/11 Pages) NXP Semiconductors – NPN/PNP resistor-equipped transistors

Philips Semiconductors
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
10³
h_FE
10²
10
006aaa034
(1)
(2)
(3)
1
V_CEsat
(V)
10^−1
006aaa035
(1)
(2)
(3)
1
10^−1
1
10
10²
I_C (mA)
V_CE = 5 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 1. TR1 (NPN): DC current gain as a function of
collector current; typical values
006aaa036
10
10^−2
1
10
10²
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −40 °C
Fig 2. TR1 (NPN): Collector-emitter voltage as a
function of collector current; typical values
006aaa037
10
V_I(on)
(V)
(1)
(2)
1
(3)
V_I(off)
(V)
(1)
1
(2)
(3)
10^−1
10^−1
1
10
10²
I_C (mA)
10^−1
10^−2
10^−1
1
10
I_C (mA)
V_CE = 0.3 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 3. TR1 (NPN): On-state input voltage as a function
of collector current; typical values
V_CE = 5 V
(1) T_amb = −40 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 4. TR1 (NPN): Off-state input voltage as a function
of collector current; typical values
9397 750 14517
Product data sheet
Rev. 09 — 18 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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