PIMD3 Datasheet, PDF (3/11 Pages) NXP Semiconductors – NPN/PNP resistor-equipped transistors

Philips Semiconductors
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
5. Limiting values
Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor; for the PNP transistor with negative polarity
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
V_I
input voltage TR1
positive
-
negative
-
input voltage TR2
positive
-
negative
-
I_O
output current (DC)
-
I_CM
peak collector current
-
P_tot
total power dissipation
T_amb ≤ 25 °C
SOT363
[1] _-
SOT457
[2] _-
SOT666
[1] [3] _-
T_stg
storage temperature
−65
T_j
junction temperature
-
T_amb
ambient temperature
−65
Per device
P_tot
total power dissipation
T_amb ≤ 25 °C
SOT363
[1] _-
SOT457
[2] _-
SOT666
[1] [3] _-
Max Unit
50
V
50
V
10
V
+40
V
−10
V
+10
V
−40
V
100
mA
100
mA
200
mW
300
mW
200
mW
+150 °C
150
°C
+150 °C
300
mW
600
mW
300
mW
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB with 65 µm copper strip line, standard footprint.
[3] Reflow soldering is the only recommended soldering method.
9397 750 14517
Product data sheet
Rev. 09 — 18 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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