PIMD3 Datasheet, PDF (4/11 Pages) NXP Semiconductors – NPN/PNP resistor-equipped transistors

Philips Semiconductors
PEMD3; PIMD3; PUMD3
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
6. Thermal characteristics
Table 7: Thermal characteristics
Symbol Parameter
Conditions
Per transistor
R_th(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT457
SOT666
Per device
R_th(j-a)
thermal resistance from in free air
junction to ambient
SOT363
SOT457
SOT666
Min Typ Max
[1] _-
-
625
[2] _-
-
417
[1] [3] _-
-
625
[1] _-
-
416
[2] _-
-
208
[1] [3] _-
-
416
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB with 65 µm copper strip line, standard footprint.
[3] Reflow soldering is the only recommended soldering method.
Unit
K/W
K/W
K/W
K/W
K/W
K/W
7. Characteristics
Table 8: Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
Per transistor; for the PNP transistor with negative polarity
I_CBO
collector-base cut-off V_CB = 50 V; I_E = 0 A
current
-
-
100 nA
I_CEO
collector-emitter
cut-off current
V_CE = 30 V; I_B = 0 A
V_CE = 30 V; I_B = 0 A;
T_j = 150 °C
I_EBO
emitter-base cut-off V_EB = 5 V; I_C = 0 A
current
-
-
1
µA
-
-
50 µA
-
-
400 µA
h_FE
V_CEsat
DC current gain
collector-emitter
saturation voltage
V_CE = 5 V; I_C = 5 mA
I_C = 10 mA; I_B = 0.5 mA
30 -
-
-
-
150 mV
V_I(off)
V_I(on)
R1
off-state input voltage V_CE = 5 V; I_C = 100 µA
on-state input voltage V_CE = 0.3 V; I_C = 10 mA
bias resistor 1 (input)
-
1.1 0.8 V
2.5 1.8 -
V
7
10 13 kΩ
R2/R1 bias resistor ratio
0.8 1
1.2
C_c
collector capacitance V_CB = 10 V; I_E = i_e = 0 A;
-
-
-
f = 1 MHz
TR1 (NPN)
-
-
2.5 pF
TR2 (PNP)
-
-
3
pF
9397 750 14517
Product data sheet
Rev. 09 — 18 May 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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