PHP9N60E Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
10.3 max
Preliminary specification
PHP9N60E, PHB9N60E, PHW9N60E
4.5 max
1.4 max
11 max
15.4
2.5
0.85 max
0.5
(x2)
2.54 (x2)
Fig.2. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
Fig.3. SOT404 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
January 1998
5
Rev 1.000