PHP9N60E Datasheet, PDF (3/7 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Preliminary specification
PHP9N60E, PHB9N60E, PHW9N60E
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T_j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_S
Continuous source current T_mb = 25˚C
(body diode)
I_SM
Pulsed source current (body T_mb = 25˚C
diode)
V_SD
Diode forward voltage
I_S = 8.7 A; V_GS = 0 V
t_rr
Reverse recovery time
I_S = 8.7 A; V_GS = 0 V; dI/dt = 100 A/µs
Q_rr
Reverse recovery charge
MIN. TYP. MAX. UNIT
-
- 8.7 A
-
- 35 A
-
- 1.2 V
- 740 - ns
-
9
- µC
January 1998
3
Rev 1.000