PHP9N60E Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistors Avalanche energy rated

Philips Semiconductors
PowerMOS transistors
Avalanche energy rated
Preliminary specification
PHP9N60E, PHB9N60E, PHW9N60E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
E_AS
E_AR
I_AS, I_AR
Non-repetitive avalanche Unclamped inductive load, I_D = 8.7 A;
energy
V_DD ≤ 50 V; starting T_j = 25˚C; R_GS = 50 Ω;
Repetitive avalanche energy^{2 VGS = 10 V}
Repetitive and non-repetitive
avalanche current
MIN.
-
-
-
MAX.
678
17
8.7
UNIT
mJ
mJ
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN. TYP. MAX. UNIT
-
- 0.8 K/W
SOT78 package, in free air
- 60 - K/W
SOT429 package, in free air
- 45 - K/W
SOT404 package, pcb mounted, minimum - 50 - K/W
footprint
ELECTRICAL CHARACTERISTICS
T_j = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS Drain-source breakdown
voltage
V_GS = 0 V; I_D = 0.25 mA
∆V_(BR)DSS / Drain-source breakdown
∆T_j
voltage temperature
coefficient
V_DS = V_GS; I_D = 0.25 mA
R_DS(ON)
V_GS(TO)
g_fs
I_DSS
I_GSS
Drain-source on resistance V_GS = 10 V; I_D = 4.4 A
Gate threshold voltage
V_DS = V_GS; I_D = 0.25 mA
Forward transconductance V_DS = 30 V; I_D = 4.4 A
Drain-source leakage current V_DS = 600 V; V_GS = 0 V
V_DS = 480 V; V_GS = 0 V; T_j = 125 ˚C
Gate-source leakage current V_GS = ±30 V; V_DS = 0 V
Q_g(tot)
Q_gs
Q_gd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
I_D = 8.7 A; V_DD = 480 V; V_GS = 10 V
t_d(on)
Turn-on delay time
t_r
Turn-on rise time
t_d(off)
Turn-off delay time
t_f
Turn-off fall time
V_DD = 300 V; R_D = 33 Ω;
R_G = 5.6 Ω
L_d
Internal drain inductance Measured from tab to centre of die
L_d
Internal drain inductance Measured from drain lead to centre of die
(SOT78 and SOT429 packages only)
L_s
Internal source inductance Measured from source lead to source
bond pad
C_iss
Input capacitance
C_oss
Output capacitance
C_rss
Feedback capacitance
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
600 -
-
V
- 0.1 - %/K
- 0.7 0.85 Ω
2.0 3.0 4.0 V
4 5.5 -
S
-
2 100 µA
- 80 1000 µA
- 10 200 nA
- 130 150 nC
-
8 10 nC
- 60 85 nC
- 20 - ns
- 55 - ns
- 160 - ns
- 70 - ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 1500 - pF
- 200 - pF
- 112 - pF
2 pulse width and repetition rate limited by T_j max.
January 1998
2
Rev 1.000