PHP11N06LT Datasheet, PDF (5/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor Logic level FET

Philips Semiconductors
N-channel TrenchMOS™ transistor
Logic level FET
Product specification
PHP11N06LT, PHB11N06LT
PHD11N06LT
Drain current, ID (A)
10
9 ^{VDS > ID X RDS(ON)}
8
7
6
5
4
3
2
175 C
1
Tj = 25 C
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
I_D = f(V_GS)
Transconductance, gfs (S)
8
VDS > ID X RDS(ON)
7
Tj = 25 C
6
5
175 C
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9 10
Drain current, ID (A)
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D)
Normalised On-state Resistance
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
Fig.9. Normalised drain-source on-state resistance.
R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j)
Threshold Voltage, VGS(TO) (V)
2.25
2
maximum
1.75
1.5
typical
1.25
1
minimum
0.75
0.5
0.25
0
-60 -40 -20
0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
1.0E-01 ^{Drain current, ID (A)}
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0
0.5
1
1.5
2
2.5
3
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C; V_DS = V_GS
Capacitances, Ciss, Coss, Crss (pF)
1000
Ciss
100
Coss
Crss
10
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Fig.12. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
August 1999
5
Rev 1.000