PHP11N06LT Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor Logic level FET

Philips Semiconductors
N-channel TrenchMOS™ transistor
Logic level FET
Product specification
PHP11N06LT, PHB11N06LT
PHD11N06LT
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
E_AS
Non-repetitive avalanche Unclamped inductive load, I_AS = 3.3 A;
energy
t_p = 220 µs; T_j prior to avalanche = 25˚C;
V_DD ≤ 25 V; R_GS = 50 Ω; V_GS = 5 V; refer to
fig:15
I_AS
Peak non-repetitive
avalanche current
MIN.
-
-
MAX.
25
10.3
UNIT
mJ
A
THERMAL RESISTANCES
SYMBOL PARAMETER
R_{th j-mb}
R_{th j-a}
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
SOT78 package, in free air
SOT428 and SOT404 package, pcb
mounted, minimum footprint
TYP.
-
60
50
MAX.
4.5
-
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS
V_GS(TO)
R_DS(ON)
g_fs
I_GSS
I_DSS
Q_g(tot)
Q_gs
Q_gd
t_{d on}
t_r
t_{d off}
t_f
L_d
L_d
L_s
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Forward transconductance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
V_GS = 0 V; I_D = 0.25 mA;
V_DS = V_GS; I_D = 1 mA
V_GS = 10 V; I_D = 5.5 A
V_GS = 5 V; I_D = 5.5 A
V_DS = 25 V; I_D = 5.5 A
V_GS = ±5 V; V_DS = 0 V
V_DS = 55 V; V_GS = 0 V;
T_j = -55˚C
T_j = 175˚C
T_j = -55˚C
T_j = 175˚C
T_j = 175˚C
I_D = 10 A; V_DD = 44 V; V_GS = 5 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V_DD = 30 V; R_D = 2.7 Ω;
R_G = 10 Ω; V_GS = 5 V
Resistive load
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured from tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
C_iss
Input capacitance
C_oss
Output capacitance
C_rss
Feedback capacitance
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
55 -
-
V
50 -
-
V
1.0 1.5 2.0 V
0.5 -
-
V
-
- 2.3 V
- 100 130 mΩ
- 120 150 mΩ
- 250 315 mΩ
4
7
-
S
- 10 100 nA
- 0.05 10 µA
-
- 500 µA
- 5.2 - nC
- 1.2 - nC
- 3.0 - nC
-
6 16 ns
- 64 80 ns
- 20 30 ns
- 26 40 ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 250 330 pF
- 55 75 pF
- 42 55 pF
August 1999
2
Rev 1.000