PHP11N06LT Datasheet, PDF (3/12 Pages) NXP Semiconductors – N-channel TrenchMOS transistor Logic level FET

Philips Semiconductors
N-channel TrenchMOS™ transistor
Logic level FET
Product specification
PHP11N06LT, PHB11N06LT
PHD11N06LT
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T_j = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_S
Continuous source current
(body diode)
I_SM
Pulsed source current (body
diode)
V_SD
Diode forward voltage
I_F = 10 A; V_GS = 0 V
t_rr
Reverse recovery time
I_F = 10 A; -dI_F/dt = 100 A/µs;
Q_rr
Reverse recovery charge V_GS = 0 V; V_R = 30 V
MIN. TYP. MAX. UNIT
-
- 10.3 A
-
- 41 A
- 1.15 1.5 V
- 35 - ns
- 55 - nC
August 1999
3
Rev 1.000