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PDTD123E Datasheet, PDF (5/10 Pages) NXP Semiconductors – NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW
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Philips Semiconductors
PDTD123E series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
103
hFE
102
006aaa318
(1)
(2)
(3)
10
1
10−1
10−1
1
10
102
103
IC (mA)
VCE = 5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
006aaa320
10
VI(on)
(V)
(1)
1
(2)
(3)
10−1
VCEsat
(V)
006aaa319
(1)
(2)
(3)
10−2
1
10
102
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa321
10
VI(off)
(V)
(1)
1
(2)
(3)
10−1
10−1
1
10
102
103
IC (mA)
10−1
10−1
1
10
IC (mA)
VCE = 0.3 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of collector
current; typical values
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Off-state input voltage as a function of collector
current; typical values
9397 750 14582
Product data sheet
Rev. 01 — 8 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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