PDTD123E Datasheet, PDF (4/10 Pages) NXP Semiconductors – NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

Philips Semiconductors
PDTD123E series
NPN 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
6. Thermal characteristics
Table 7:
Symbol
R_th(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from in free air
junction to ambient
SOT346
SOT54
SOT23
Min
Typ
Max
[1]
-
-
500
-
-
250
-
-
500
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Unit
K/W
K/W
K/W
7. Characteristics
Table 8: Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
I_CBO
collector-base cut-off V_CB = 40 V; I_E = 0 A
current
V_CB = 50 V; I_E = 0 A
I_CEO
collector-emitter
V_CE = 50 V; I_B = 0 A
cut-off current
I_EBO
emitter-base cut-off V_EB = 5 V; I_C = 0 A
current
h_FE
V_CEsat
DC current gain
collector-emitter
saturation voltage
V_CE = 5 V; I_C = 50 mA
I_C = 50 mA; I_B = 2.5 mA
V_I(off)
off-state input
voltage
V_CE = 5 V; I_C = 100 µA
V_I(on)
on-state input
voltage
V_CE = 0.3 V; I_C = 20 mA
R1
bias resistor 1 (input)
R2/R1 bias resistor ratio
C_c
collector capacitance V_CB = 10 V; I_E = i_e = 0 A;
f = 100 MHz
Min Typ Max Unit
-
-
100 nA
-
-
100 nA
-
-
0.5 µA
-
-
2
mA
40
-
-
-
-
0.3 V
0.6 1.1 1.8 V
1.0 1.5 2.0 V
1.54 2.2
0.9 1.0
-
7
2.86 kΩ
1.1
-
pF
9397 750 14582
Product data sheet
Rev. 01 — 8 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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