PDTD123E Datasheet, PDF (1/10 Pages) NXP Semiconductors – NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

PDTD123E series
NPN 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 8 April 2005
Product data sheet
1. Product profile
1.1 General description
500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1: Product overview
Type number Package
Philips
PDTD123EK
SOT346
PDTD123ES ^[1] SOT54
PDTD123ET
SOT23
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement
PDTB123EK
PDTB123ES
PDTB123ET
1.2 Features
s Built-in bias resistors
s Simplifies circuit design
s 500 mA output current capability
s Reduces component count
s Reduces pick and place costs
s ±10 % resistor ratio tolerance
1.3 Applications
s Digital application in automotive and
industrial segments
s Controlling IC inputs
s Cost saving alternative for BC817 series
in digital applications
s Switching loads
1.4 Quick reference data
Table 2:
Symbol
V_CEO
I_O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ
-
-
-
-
1.54 2.2
0.9
1.0
Max Unit
50
V
500 mA
2.86 kΩ
1.1