BUK7621-30 Datasheet, PDF (5/7 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7621-30
1E-01
Sub-Threshold Conduction
1E-02
1E-03
2%
typ
98%
1E-04
1E-05
1E-06
0
1
2
3
4
5
Fig.11. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C; V_DS = V_GS
Capacitances, Ciss, Coss, Crss (pF)
10000
PHP50N03T
1000
Ciss
Coss
100
1
Crss
10
100
Drain-source voltage, VDS (V)
Fig.12. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
VGS, Gate-Source voltage (Volts)
20
VDD = 30 V
ID = 25 A
Tj = 25 C
15
PHP50N03T
10
5
0
0
10
20
30
40
50
60
Qg, Gate charge (nC)
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); parameter V_DS
Source-Drain diode current, IF(A)
50
VGS = 0 V
40
PHP50N03T
30
20
175 C
Tj = 25 C
10
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
Source-Drain voltage, VSDS (V)
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); parameter T_j
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20 40 60 80 100 120 140 160 180
Tmb / C
Fig.15. Normalised avalanche energy rating.
W_DSS% = f(T_mb)
VGS
0
RGS
L
VDS
T.U.T.
+ ^VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
W_DSS = 0.5 ⋅ LI_D² ⋅ BV_DSS/(BV_DSS − V_DD)
July 1997
5
Rev 1.000