BUK7621-30 Datasheet, PDF (4/7 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7621-30
ID, Drain current (Amps)
50
10 V
20 V
40
6.5 V
PHP50N03T
Tj = 25 C
6V
30
5.5 V
20
5V
10
4.5 V
VGS = 4 V
0
0
5
10
15
20
25
30
VDS, Drain-Source voltage (Volts)
Fig.5. Typical output characteristics, T_j = 25 ˚C.
I_D = f(V_DS); parameter V_GS
RDS(on), Drain-Source on resistance (Ohms)
0.06
PHP50N03T
VGS = 4 V
4.5 V
5V
5.5 V
0.05
0.04
0.03
Tj = 25 C
0.02
10 V
0.01
20 V
0
0
10
20
30
40
50
ID, Drain current (Amps)
Fig.6. Typical on-state resistance, T_j = 25 ˚C.
R_DS(ON) = f(I_D); parameter V_GS
Drain current, ID (A)
50
VDS = 30 V
40
PHP50N03T
30
20
175 C Tj = 25 C
10
0
0
2
4
6
8
10
Gate-source voltage, VGS (V)
Fig.7. Typical transfer characteristics.
I_D = f(V_GS); parameter T_j
Transconductance, gfs (S)
25
VDS = 30 V
20
15
10
PHP50N03T
Tj = 25 C
175 C
5
0
0
10
20
30
40
50
Drain current, ID (A)
Fig.8. Typical transconductance, T_j = 25 ˚C.
g_fs = f(I_D)
2.5 ^{Rds(on) normlised to 25degC}
BUK959-60
2
1.5
1
0.5
-100
-50
0
50
100
150
200
Tmb / degC
Fig.9. Normalised drain-source on-state resistance.
a = R_DS(ON)/R_{DS(ON)25 ˚C} = f(T_j); I_D = 25 A; V_GS = 5 V
VGS(TO) / V
5
max.
4
typ.
3
min.
2
BUK759-60
1
0
-100
-50
0
50
Tj / C
100
150
200
Fig.10. Gate threshold voltage.
V_GS(TO) = f(T_j); conditions: I_D = 1 mA; V_DS = V_GS
July 1997
4
Rev 1.000