BUK7621-30 Datasheet, PDF (2/7 Pages) NXP Semiconductors – TrenchMOS transistor Standard level FET

Philips Semiconductors
TrenchMOS™ transistor
Standard level FET
Product specification
BUK7621-30
STATIC CHARACTERISTICS
T_j= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V_(BR)DSS
V_GS(TO)
I_DSS
I_GSS
±V_(BR)GSS
R_DS(ON)
Drain-source breakdown
V_GS = 0 V; I_D = 0.25 mA;
voltage
T_j = -55˚C
Gate threshold voltage
V_DS = V_GS; I_D = 1 mA
T_j = 175˚C
T_j = -55˚C
Zero gate voltage drain current V_DS = 30 V; V_GS = 0 V;
T_j = 175˚C
Gate source leakage current V_GS = ±10 V; V_DS = 0 V
T_j = 175˚C
Gate source breakdown voltage I_G = ±1 mA;
Drain-source on-state
V_GS = 10 V; I_D = 25 A
resistance
T_j = 175˚C
MIN.
30
27
2.0
1.0
-
-
-
-
-
16
-
-
TYP.
-
-
3.0
-
-
0.05
-
0.02
-
-
19
-
MAX.
-
-
4.0
-
4.4
10
500
1
20
-
21
39
UNIT
V
V
V
V
V
µA
µA
µA
µA
V
mΩ
mΩ
DYNAMIC CHARACTERISTICS
T_j = 25˚C unless otherwise specified
SYMBOL PARAMETER
g_fs
Q_g(tot)
Q_gs
Q_gd
C_iss
C_oss
C_rss
t_{d on}
t_r
t_{d off}
t_f
L_d
L_d
Forward transconductance
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
L_s
Internal source inductance
CONDITIONS
V_DS = 25 V; I_D = 25 A
I_D = 25 A; V_DD = 30 V; V_GS = 10 V
V_GS = 0 V; V_DS = 25 V; f = 1 MHz
V_DD = 30 V; I_D = 25 A;
V_GS = 10 V; R_G = 10 Ω
Resistive load
Measured from tab to centre of die
Measured from drain lead solder
point to centre of die
Measured from source lead solder
point to source bond pad
MIN.
6
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
19
28
7
11
974
325
152
10
45
30
32
3.5
4.5
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
nH
nH
-
7.5
-
nH
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T_j = 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
I_DR
Continuous reverse drain
current
I_DRM
Pulsed reverse drain current
V_SD
Diode forward voltage
I_F = 25 A; V_GS = 0 V
I_F = 50 A; V_GS = 0 V
t_rr
Reverse recovery time
I_F = 25 A; -dI_F/dt = 100 A/µs;
Q_rr
Reverse recovery charge
V_GS = -10 V; V_R = 25 V
MIN. TYP. MAX. UNIT
-
-
50
A
-
- 200 A
- 0.95 1.2 V
-
1.0
-
- 100 -
ns
-
0.4
-
µC
July 1997
2
Rev 1.000