BUK75150-55A Datasheet, PDF (5/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK75/76150-55A
TrenchMOS™ standard level FET
6. Characteristics
Table 5: Characteristics
T_j = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Static characteristics
V_(BR)DSS drain-source breakdown
I_D = 0.25 mA; V_GS = 0 V
voltage
T_j = 25 °C
55
T_j = −55 °C
50
V_GS(th)
gate-source threshold voltage I_D = 1 mA; V_DS = V_GS;
Figure 9
T_j = 25 °C
2
T_j = 175 °C
1
T_j = −55 °C
-
I_DSS
drain-source leakage current V_DS = 55 V; V_GS = 0 V
T_j = 25 °C
-
T_j = 175 °C
-
I_GSS
gate-source leakage current V_GS = ±20 V; V_DS = 0 V
-
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 5 A;
Figure 7 and 8
T_j = 25 °C
-
T_j = 175 °C
-
Dynamic characteristics
Q_g(tot)
total gate charge
V_GS = 10 V; V_DD = 44 V;
-
Q_gs
gate-source charge
I_D = 3 A; Figure 14
-
Q_gd
gate-drain (Miller) charge
-
C_iss
input capacitance
V_GS = 0 V; V_DS = 25 V;
-
C_oss
output capacitance
f = 1 MHz; Figure 12
-
C_rss
reverse transfer capacitance
-
t_d(on)
t_r
turn-on delay time
rise time
V_DD = 25 V; R_L = 2.7 Ω;
-
V_GS = 10 V; R_G = 5.6 Ω
-
t_d(off)
turn-off delay time
-
t_f
fall time
-
L_d
internal drain inductance
from drain lead 6 mm from
-
package to center of die
from contact screw on
-
mounting base to center of
die SOT78
from upper edge of drain
-
mounting base to center of
die SOT404
L_s
internal source inductance from source lead 6 mm from
-
package to source bond pad
Typ
Max
Unit
-
-
V
-
-
V
3
4
V
-
-
V
-
4.4
V
0.05
10
µA
-
500
µA
2
100
nA
127
150
mΩ
-
300
mΩ
5.5
-
nC
1
-
nC
2.7
-
nC
242
322
pF
40
48
pF
25
35
pF
3
-
ns
26
-
ns
8
-
ns
10
-
ns
4.5
-
nH
3.5
-
nH
2.5
-
nH
7.5
-
nH
9397 750 12342
Product data
Rev. 02 — 25 November 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5 of 15