BUK75150-55A Datasheet, PDF (1/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

BUK75/76150-55A
TrenchMOS™ standard level FET
Rev. 02 — 25 November 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips General-Purpose Automotive (GPA) TrenchMOS™ technology.
1.2 Features
s Very low on-state resistance
s 175 °C rated
s Q101 compliant
s Standard level compatible.
1.3 Applications
s Automotive systems
s Motors, lamps and solenoids
s 12 V and 24 V loads
s General purpose power switching.
1.4 Quick reference data
s E_DS(AL)S ≤ 16 mJ
s I_D ≤ 11 A
s R_DSon = 127 mΩ (typ)
s P_tot ≤ 36 W.
2. Pinning information
Table 1: Pinning - SOT78 and SOT404 simplified outlines and symbol
Pin
Description
Simplified outline
1
gate (g)
mb
2
drain (d)
[1]
mb
3
source (s)
mb
mounting base,
connected to
drain (d)
MBK106
123
SOT78 (TO-220AB)
2
1
3 MBK116
SOT404 (D²-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
Symbol
d
g
MBB076
s