BUK6E4R0-75C_15 Datasheet, PDF (5/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
BUK6E4R0-75C
N-channel TrenchMOS FET
5. Thermal characteristics
Table 5.
Symbol
R_th(j-mb)
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Conditions
see Figure 4
vertical in free air
Min Typ Max Unit
-
-
0.49 K/W
-
60 -
K/W
1
Z_th (K/W)
10^-1
10^-2
δ = 0.5
0.2
0.1
0.05
0.02
003aae375
P
δ = ^tp
T
single shot
t_p
t
T
10^-3
10^-6
10^-5
10^-4
10^-3
10^-2
10^-1
t_p (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK6E4R0-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 August 2010
© NXP B.V. 2010. All rights reserved.
5 of 14