BUK6E4R0-75C_15 Datasheet, PDF (3/14 Pages) NXP Semiconductors – N-channel TrenchMOS FET

NXP Semiconductors
BUK6E4R0-75C
N-channel TrenchMOS FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
V_DS
drain-source voltage
T_j ≥ 25 °C; T_j ≤ 175 °C
V_GS
gate-source voltage
DC
Pulsed
-
[1]
-16
[2]
-20
I_D
drain current
I_DM
peak drain current
T_mb = 25 °C; V_GS = 10 V; see Figure 1 ^[3]
-
T_mb = 100 °C; V_GS = 10 V; see Figure 1 ^[3]
-
T_mb = 25 °C; t_p ≤ 10 µs; pulsed;
-
see Figure 3
P_tot
total power dissipation
T_mb = 25 °C; see Figure 2
-
T_stg
storage temperature
-55
T_j
junction temperature
-55
Source-drain diode
I_S
source current
I_SM
peak source current
Avalanche ruggedness
T_mb = 25 °C
t_p ≤ 10 µs; pulsed; T_mb = 25 °C
[3]
-
-
E_DS(AL)S
E_DS(AL)R
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
I_D = 120 A; V_sup ≤ 75 V; R_GS = 50 Ω;
V_GS = 10 V; T_j(init) = 25 °C; unclamped
-
[4][5][6] _-
[1] -16V accumulated duration not to exceed 168 hrs
[2] Accumulated pulse duration not to exceed 5 mins.
[3] Continuous current is limited by package.
[4] Single-pulse avalanche rating limited by maximum junction temperature of 175 °C.
[5] Repetitive avalanche rating limited by an average junction temperature of 170 °C.
[6] Refer to application note AN10273 for further information.
Max Unit
75 V
16 V
20 V
120 A
120 A
670 A
306 W
175 °C
175 °C
120 A
670 A
523 mJ
-
J
BUK6E4R0-75C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 30 August 2010
© NXP B.V. 2010. All rights reserved.
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