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BUK6213-30A_15 Datasheet, PDF (5/10 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET
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NXP Semiconductors
BUK6213-30A
N-channel TrenchMOS intermediate level FET
Table 6. Characteristics …continued
Symbol
Parameter
Conditions
IDSS
drain leakage current VDS = 30 V; VGS = 0 V; Tj = 175 °C;
see Figure 4; see Figure 5
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
LD
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
ID = 25 A; VDS = 24 V; VGS = 10 V
ID = 25 A; VDS = 24 V; VGS = 5 V
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Tj = 25 °C
VDS = 25 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω
measured from drain to center of die
LS
internal source
measured from source lead to source
inductance
bond pad
Source-drain diode
VSD
source-drain voltage IS = 15 A; VGS = 0 V; Tj = 25 °C
trr
reverse recovery time IS = 20 A; dIS/dt = -100 A/µs;
Qr
recovered charge
VGS = -10 V; VDS = 25 V
30
03nk60
2
RDSon
(mΩ)
label is VGS (V)
a
5
4.5
1.5
20
4
3.5
10
1
20
10
0.5
Min Typ Max Unit
-
-
500 µA
-
44
-
nC
-
26
-
nC
-
7
-
nC
-
14 -
nC
-
1490 1986 pF
-
505 606 pF
-
325 445 pF
-
12
-
ns
-
95 -
ns
-
75
-
ns
-
105 -
ns
-
2.5 -
nH
-
7.5 -
nH
-
0.85 1.2 V
-
49
-
ns
-
27
-
nC
03aa27
0
0
50
100
150
200
ID (A)
0
−60
0
60
120 Tj (°C) 180
Fig 4. Drain-source on-state resistance as a function Fig 5. Normalized drain-source on-state resistance
of drain current; typical values.
factor as a function of junction temperature
BUK6213-30A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 2 February 2011
© NXP B.V. 2011. All rights reserved.
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