BUK6213-30A_15 Datasheet, PDF (1/10 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET

BUK6213-30A
N-channel TrenchMOS intermediate level FET
Rev. 03 — 2 February 2011
Product data sheet
1. Product profile
1.1 General description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
 AEC Q101 compliant
 Suitable for logic or standard level
gate drive sources
 Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
 12 V loads
 Automotive systems
 General purpose power switching
 Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference data
Symbol
V_DS
Parameter
drain-source
voltage
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
V_GS = 10 V; T_mb = 25 °C;
see Figure 1; see Figure 3
P_tot
total power
T_mb = 25 °C; see Figure 2
dissipation
Static characteristics
R_DSon
drain-source
on-state
resistance
V_GS = 10 V; I_D = 10 A;
T_j = 25 °C; see Figure 4;
see Figure 5
Avalanche ruggedness
E_DS(AL)S
non-repetitive
drain-source
avalanche energy
Dynamic characteristics
I_D = 55 A; V_sup ≤ 30 V;
R_GS = 50 Ω; V_GS = 10 V;
T_j(init) = 25 °C; unclamped
Q_GD
gate-drain charge V_GS = 5 V; I_D = 25 A;
V_DS = 24 V
[1] Continuous current is limited by bondwires.
Min Typ Max Unit
-
-
30 V
[1]
-
-
55 A
-
-
102 W
-
10 13 mΩ
-
-
267 mJ
-
14 -
nC