 English |
|
|
|
|
|
|
|
| BUK6213-30A_15 Datasheet, PDF (4/10 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
| |||
| ◁ |
NXP Semiconductors
BUK6213-30A
N-channel TrenchMOS intermediate level FET
103
ID
(A)
102
Limit RDSon = VDS/ID
Capped at 55 A due to bondwires
10
1
1
DC
10
03nk62
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
6. Characteristics
Conditions
Min Typ Max Unit
-
-
1.4 K/W
-
71.4 -
K/W
Table 6. Characteristics
Symbol
Parameter
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
VGS(th)
VGSth
gate-source threshold
voltage
gate-source threshold
voltage
IDSS
drain leakage current
IGSS
gate leakage current
RDSon
drain-source on-state
resistance
Conditions
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 25 °C
ID = 1 mA; VDS = VGS; Tj = -55 °C
ID = 1 mA; VDS = VGS; Tj = 175 °C
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 10 A
VGS = 10 V; ID = 10 A; Tj = 175 °C
VGS = 10 V; ID = 10 A; Tj = 25 °C;
see Figure 4; see Figure 5
BUK6213-30A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 â 2 February 2011
Min Typ Max Unit
30 -
-
V
27 -
-
V
1
1.8 3
V
-
-
3.5 V
0.5 -
-
V
-
0.05 10 µA
-
2
100 nA
-
2
100 nA
-
15
20
mâ¦
-
-
25
mâ¦
-
10
13
mâ¦
© NXP B.V. 2011. All rights reserved.
4 of 10
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese