BUK475-200A Datasheet, PDF (5/7 Pages) NXP Semiconductors – PowerMOS transistor Isolated version of BUK455-200A/B

Philips Semiconductors
PowerMOS transistor
Product specification
BUK475-200A/B
1E-01 ^{ID / A}
SUB-THRESHOLD CONDUCTION
1E-02
1E-03
2%
typ
98 %
1E-04
1E-05
1E-06
0
1
2
3
4
VGS / V
Fig.11. Sub-threshold drain current.
I_D = f(V_GS); conditions: T_j = 25 ˚C; V_DS = V_GS
10000 ^{C / pF}
BUK4y5-200
Ciss
1000
Coss
100
Crss
10
0
20
40
VDS / V
Fig.12. Typical capacitances, C_iss, C_oss, C_rss.
C = f(V_DS); conditions: V_GS = 0 V; f = 1 MHz
12 ^{VGS / V}
10
8
6
4
BUK455-200
VDS / V =40
160
1
0
0
10
20
30
QG / nC
Fig.13. Typical turn-on gate-charge characteristics.
V_GS = f(Q_G); conditions: I_D = 14 A; parameter V_DS
IF / A
30
BUK455-200A
20
Tj / C = 150
25
10
0
0
1
2
VSDS / V
Fig.14. Typical reverse diode current.
I_F = f(V_SDS); conditions: V_GS = 0 V; parameter T_j
WDSS%
120
110
100
90
80
70
60
50
40
30
20
10
0
20
40
60
80 100 120 140
Ths / C
Fig.15. Normalised avalanche energy rating.
W_DSS% = f(T_hs); conditions: I_D = 14 A
VGS
0
RGS
L
VDS
T.U.T.
+ ^VDD
-
-ID/100
R 01
shunt
Fig.16. Avalanche energy test circuit.
W_DSS = 0.5 ⋅ LI_D² ⋅ BV_DSS/(BV_DSS − V_DD)
June 1996
5
Rev 1.200