BUK475-200A Datasheet, PDF (1/7 Pages) NXP Semiconductors – PowerMOS transistor Isolated version of BUK455-200A/B

Philips Semiconductors
PowerMOS transistor
Isolated version of BUK455-200A/B
Product specification
BUK475-200A/B
GENERAL DESCRIPTION
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope. The
device is intended for use in Switched
Mode Power Supplies (SMPS),
motor control, welding, DC/DC and
AC/DC converters, and in general
purpose switching applications.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_DS
I_D
P_tot
T_j
R_DS(ON)
BUK475
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
MAX.
-200A
200
7.6
30
150
0.23
MAX.
-200B
200
7
30
150
0.28
UNIT
V
A
W
˚C
Ω
PINNING - SOT186A
PIN
DESCRIPTION
1 gate
2 drain
3 source
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
d
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
V_DS
V_DGR
±V_GS
Drain-source voltage
Drain-gate voltage
Gate-source voltage
-
-
R_GS = 20 kΩ
-
-
-
I_D
Drain current (DC)
T_hs = 25 ˚C
-
I_D
Drain current (DC)
T_hs = 100 ˚C
-
I_DM
Drain current (pulse peak value) T_hs = 25 ˚C
-
P_tot
Total power dissipation
T_stg
Storage temperature
T_j
Junction temperature
T_hs = 25 ˚C
-
-
- 55
-
-
THERMAL RESISTANCES
SYMBOL
R_{th j-hs}
R_{th j-a}
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MAX.
200
200
30
-200A
7.6
4.8
30
-200B
7
4.4
28
30
150
150
UNIT
V
V
V
A
A
A
W
˚C
˚C
MIN. TYP. MAX. UNIT
-
- 4.17 K/W
-
55
- K/W
June 1996
1
Rev 1.200