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| BUK475-200A Datasheet, PDF (2/7 Pages) NXP Semiconductors – PowerMOS transistor Isolated version of BUK455-200A/B | |||
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Philips Semiconductors
PowerMOS transistor
Product specification
BUK475-200A/B
STATIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
V(BR)DSS
VGS(TO)
IDSS
IDSS
IGSS
RDS(ON)
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Zero gate voltage drain current
Gate source leakage current
Drain-source on-state
resistance
CONDITIONS
VGS = 0 V; ID = 0.25 mA
VDS = VGS; ID = 1 mA
VDS = 200 V; VGS = 0 V; Tj = 25 ËC
VDS = 200 V; VGS = 0 V; Tj =125 ËC
VGS = ±30 V; VDS = 0 V
VGS = 10 V;
BUK475-200A
ID = 7 A
BUK475-200B
MIN.
200
2.1
-
-
-
-
-
TYP.
-
3.0
1
0.1
10
0.2
0.22
MAX. UNIT
-
V
4.0 V
10 µA
1.0 mA
100 nA
0.23 â¦
0.28 â¦
DYNAMIC CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
gfs
Forward transconductance
Ciss
Input capacitance
Coss
Output capacitance
Crss
Feedback capacitance
td on
Turn-on delay time
tr
Turn-on rise time
td off
Turn-off delay time
tf
Turn-off fall time
Ld
Internal drain inductance
Ls
Internal source inductance
CONDITIONS
VDS = 25 V; ID = 7 A
VGS = 0 V; VDS = 25 V; f = 1 MHz
VDD = 30 V; ID = 3 A;
VGS = 10 V; RGS = 50 â¦;
Rgen = 50 â¦
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
MIN.
6
-
-
-
-
-
-
-
-
TYP.
8.4
1400
190
55
18
35
85
35
4.5
MAX.
-
1750
250
80
30
60
120
50
-
UNIT
S
pF
pF
pF
ns
ns
ns
ns
nH
-
7.5
-
nH
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ⤠65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ËC unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
IDR
Continuous reverse drain
-
current
IDRM
Pulsed reverse drain current -
VSD
Diode forward voltage
IF = 7.6 A ; VGS = 0 V
trr
Reverse recovery time
IF = 7.6 A; -dIF/dt = 100 A/µs;
Qrr
Reverse recovery charge
VGS = 0 V; VR = 30 V
MIN. TYP. MAX. UNIT
-
-
7.6 A
-
-
30
A
-
1.0 1.5 V
- 150 -
ns
-
1.3
-
µC
June 1996
2
Rev 1.200
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