BUK212-50Y Datasheet, PDF (5/16 Pages) NXP Semiconductors – Single channel high-side TOPFET™

Philips Semiconductors
BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
7. Static characteristics
Table 6: Static characteristics
Limits are valid for −40 °C ≤ T_mb ≤ +150 °C and typical values for T_mb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
Clamping voltage
V_BG(CL)
V_BL(CL)
V_LG(CL)
battery-ground clamping voltage
battery-load clamping voltage
load-ground clamping voltage
Supply voltage
I_G = 1 mA; Figure 6
I_L = I_G = 1 mA
I_L = 10 mA; Figure 12 and 14
I_L = 20 A; t_p = 300 µs
50 55
50 55
−18 −23
[1] _{−20 −25}
V_BG(oper)
Current
battery-ground operating voltage
5.5 -
I_B
battery quiescent current
I_L(off)
off-state load current
I_G(on)
operating current
I_L(nom)
nominal load current (ISO)
Resistance ^[4]
V_LG = 0 V; Figure 10
T_mb = 150 °C
T_mb = 25 °C
V_BL = V_BG
T_mb = 150 °C
T_mb = 25 °C
Figure 6
V_BL = 0.5 V; T_mb = 85 °C
[2]
-
-
-
0.1
-
-
-
0.1
-
2
[3] ₂₅
-
R_BLon
battery-load on-state resistance 9 V ≤ V_BG ≤ 35 V; I_L = 20 A; Figure 5
T_mb = 25 °C
-
10
T_mb = 150 °C
-
-
V_BG = 6 V; I_L = 20 A
T_mb = 25 °C
-
13
T_mb = 150 °C
-
-
R_G
ground resistance
I_G = 10 mA
[5] ₉₅
150
Input ^[6]
I_I
input current
V_IG(CL)
input-ground clamping voltage
V_IG(on)
input-ground turn-on voltage
V_IG(off)
input-ground turn-off voltage
V_IG(on)(hys) input-ground turn-on hysteresis
I_I(on)
input turn-on current
I_I(off)
input turn-off current
Low current detection ^[7][10]
V_IG = 5 V
I_I = 200 µA
Figure 9
V_IG = 3 V
V_IG = 1.5 V
20 90
5.5 7
-
2.4
1.5 2.1
-
0.3
-
-
10 -
I_L(LC)
I_L(LC)(hys)
load low current detect
load low current detect hysteresis
−40 °C ≤ T_mb ≤ +150 °C
T_mb = 25 °C; Figure 15
0.55 -
0.65 1.8
-
0.44
Max
65
65
−28
−30
35
20
2
20
1
4
-
14
25
18
33
190
160
8.5
3
-
-
100
-
4.4
2.9
-
Unit
V
V
V
V
V
µA
µA
µA
µA
mA
A
mΩ
mΩ
mΩ
mΩ
Ω
µA
V
V
V
V
µA
µA
A
A
A
9397 750 10768
Product data
Rev. 01 — 17 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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