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BUK212-50Y Datasheet, PDF (10/16 Pages) NXP Semiconductors – Single channel high-side TOPFET™
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Philips Semiconductors
BUK212-50Y; BUK217-50Y
Single channel high-side TOPFET™
Table 9: Capacitances
Tmb = 25 °C; f = 1 MHz; VIG = 0 V.
Symbol Parameter
Cig
input-ground capacitance
Cbl
battery-load output capacitance
Csg
status-ground capacitance
Conditions
VBG = 13 V
VBL = 13 V
VSG = 5 V
Min Typ Max Unit
-
15 20 pF
-
635 900 pF
-
11 15 pF
RI
VBG
P
VIG
RS
VL
LL
RL
VSG
03pa45
Fig 12. Schematic drawing of the switching circuit.
VL
0V
ton
90%
dV/dton
toff
dV/dtoff
10%
5V
VSG
0V
5V
VIG
0
03pa51
VBG = 13 V; VIG = 5 V and Tmb = 25 °C
Fig 13. Resistive switching waveforms and definitions.
VL 0 V
IL
0A
5V
VSG
0.7 V
0V
5V
VIG
0
IL(LC)
EBL(CL)S
03pa50
VL
0V
5V
VSG
0.7 V
0V
5V
VIG
0
ton
90%
td(lc)
toff
10%
03pa48
Fig 14. Switching a large inductive load.
9397 750 10768
Product data
Fig 15. Low current detection waveforms.
Rev. 01 — 17 March 2003
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
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